Growth Modeling of InAs Colloidal Quantum Dots in Continuous Process
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초록
내용
InAs quantum dot is considered promising for NIR/IR optoelectronics based on the bandgap tunability of 0.82~1.77 eV stemmed from the quantum confinement effect. Size-tuned synthesis of InAs quantum dot requires the fine control of the reactivity of both indium and arsine precursors yet challenging mainly because of the limited choice of arsine precursors. In this study, instead of modifying the chemical reactivity of precursors, we investigated the synthetic process. Growth of the particle is monitored by absorbance measurements and TEM analysis. We then mathematically modelled the mode of crystal growth utilizing monomer diffusion dynamics. Nucleation and growth step are individually configured to induce monodispersed growth thus allowing larger sized particles without the expense of dispersity.