Molecule Charge Transfer Doping for p-Channel Solution-Processed Copper Oxide Transistors
발표자
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초록
내용
The doping of semiconductors plays a critical role in improving the performance of modern electronic devices by precisely controlling the charge carrier density. However, the absence of a stable doping method for p-type oxide semiconductors has severely restricted the development of metal-oxide based transparent electronics. Here, we report an efficient doping process for p-type oxide semiconductors by using molecule charge transfer doping with F4TCNQ. The selections of a suitable dopant and geometry play a crucial role in the charge-transfer doping effect. The insertion of F4TCNQ dopant film between a Au S/D electrode and solution-processed p-type CuxO film in bottom-gate top-contact thin-film transistors (TFTs) provide a mobility enhancement of over 20-fold with the desired threshold voltage adjustment. By combining doped p-type CuxO and n-type IGZO TFTs, a solution-processed transparent complementary metal-oxide semiconductor inverter is demonstrated with a high gain voltage of 50.