Surface modification of CdSe quantum dot floating layers in light-responsive organic flash memory
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초록
내용
In this work, we processed the surface modification of CdSe quantum dot floating layers toward the fabrication of organic field-effect transistors (OFETs) and discussed the feasibility of the light-responsive flash memory devices. A new functional thiol with pentafluorophenyl group was synthesized to control dipole moment and surface properties, all of which could affect the transistor operation when they are used as surface modifiers on the CdSe quantum dot floating layers in the OFETs. This new functional thiol exhibited larger dipole moments compared to the commercial 2,3,4,5,6-pentafluorothiophenol. The resulting OFETs showed normally-on transistor operation and sensitive response upon the voltage bias and white-light bias, and could be utilized in non-volatile flexible memory device applications.