Fluorinated Organic-Inorganic Hybrid Polymer Gate Dielectrics for High Performance Metal Oxide Thin-Film Transistors
발표자
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초록
내용
Fluorinated organic-inorganic hybrid polymer (FAGPTi) was introduced as a gate dielectric layer in In-Ga-Zn-O (IGZO) thin film transistors (TFTs). FAGPTi film showed improved insulating properties after thermal annealing process. After the optimized post treatment process, the IGZO TFTs with FAGPTi gate dielectric exhibited excellent electrical performance with mobility of 3 cm2 V-1 s-1 and operational stability against external gate bias stress.