POS5-0901
Crystallinity-Controlled ZIF-8 Heterogeneous Nucleation for Suppressed Interfacial Recombination in Perovskite Optoelectronics
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
yumin lee (chung-ang university)
Co-Author(s)
Abstract
Organic–inorganic hybrid perovskites are promising materials for next-generation optoelectronic devices owing to their strong light absorption, tunable bandgaps, and long carrier diffusion lengths. However, their performance and operational stability are limited by defect formation, ion migration, and structural degradation caused by external factors such as moisture and oxygen. In particular, defects at grain boundaries and buried interfaces act as non-radiative recombination, leading to charge loss and accelerated degradation. Zeolitic Imidazolate Framework-8 (ZIF-8) possesses intrinsic porosity, high chemical stability, and abundant nitrogen-containing coordination sites, making it a promising interfacial modifier for regulating perovskite crystallization and passivating defects.
In this study, ZIF-8 is introduced as an interfacial modifier to promote perovskite grain growth and improve the operational stability of perovskite optoelectronic devices. Its porous structure and rough surface provide heterogeneous nucleation sites, regulating initial nucleation and subsequent crystal growth. This modulation promotes the formation of dense and uniform perovskite films with well-developed crystalline grains and suppressed grain-boundary defect formation. In addition, the nitrogen-containing functional groups of ZIF-8 interact with undercoordinated ionic species at the buried interface, suppressing defect-assisted non-radiative recombination and undesirable charge accumulation. The chemically stable framework also contributes the buried contact, facilitating charge transport and mitigating performance loss under operation. Consequently, ZIF-8 modification enhances both device efficiency and durability, demonstrating its potential as an effective interfacial engineering approach for stable, high-performance perovskite optoelectronics.
In this study, ZIF-8 is introduced as an interfacial modifier to promote perovskite grain growth and improve the operational stability of perovskite optoelectronic devices. Its porous structure and rough surface provide heterogeneous nucleation sites, regulating initial nucleation and subsequent crystal growth. This modulation promotes the formation of dense and uniform perovskite films with well-developed crystalline grains and suppressed grain-boundary defect formation. In addition, the nitrogen-containing functional groups of ZIF-8 interact with undercoordinated ionic species at the buried interface, suppressing defect-assisted non-radiative recombination and undesirable charge accumulation. The chemically stable framework also contributes the buried contact, facilitating charge transport and mitigating performance loss under operation. Consequently, ZIF-8 modification enhances both device efficiency and durability, demonstrating its potential as an effective interfacial engineering approach for stable, high-performance perovskite optoelectronics.
