POS5-0804
A Versatile Molecular Buried Interlayer for Wide-Bandgap and Lead-Free Perovskite Solar Cells
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Juan Anthony Prayogo (국립부경대학교)
Co-Author(s)
Abstract
Interfacial losses remain a major challenge in both wide-bandgap lead-based and lead-free tin-based perovskite solar cells despite their importance for tandem and sustainable photovoltaic technologies. Here, we present a dipolar phosphine oxide small molecule, as a universal buried interlayer capable of simultaneously addressing interfacial limitations in these distinct perovskite systems. The molecular design combines a Lewis-basic phosphine oxide functionality with a donor-acceptor framework, enabling defect passivation, interfacial dipole formation, and favorable charge extraction at the hole-contact/perovskite interface. When introduced between the hole-selective contact and perovskite absorber, the designed materials effectively regulate buried-interface properties without altering device architecture. The interlayer reduces non-radiative recombination, improves interfacial charge transport, and promotes more favorable energetic alignment. Notably, these benefits are observed in both wide-bandgap Pb-perovskites and Sn-perovskites, highlighting the broad applicability of the molecular design. As a result, both devices deliver enhanced photovoltaic performance, reduced hysteresis, and improved operational stability relative to untreated controls. This work establishes a composition-independent molecular interfacial engineering strategy and demonstrates that a single phosphine oxide-based interlayer can effectively bridge the performance requirements of tandem-oriented wide-bandgap perovskites and lead-free tin perovskites. The findings provide a versatile platform for next-generation perovskite energy-conversion technologies.
