KES5-0760
Material Strategies for High-Performance Organic Optoelectronic Devices: From Photoactive Layers to Interlayers and Additives
When and Where
Sep 30, 2026
17:15 - 17:40
Presenter(s)
Won Suk Shin (Korea Research Institute of Chemical Technology (KRICT))
Co-Author(s)
Abstract
Organic optoelectronic devices have attracted significant attention due to their potential for flexible, lightweight, and large-area applications. The overall performance and long-term stability of these devices are highly dependent on the synergistic optimization of all constituent material layers.
Herein, we present a comprehensive study on the development of novel materials for high-performance optoelectronic devices, encompassing photoactive polymer donors, non-fullerene acceptors (NFAs), interfacial interlayer materials, and processing additives. First, we designed and synthesized a series of donor polymers and NFAs to optimize light absorption, charge transport, and energy level alignment. To further control the nanoscale morphology of the bulk-heterojunction (BHJ) active layer, strategic processing additives were introduced, which successfully suppressed charge recombination and facilitated efficient exciton dissociation. Furthermore, novel electron-transporting interlayer materials were developed to improve charge extraction and reduce interface resistance.
Herein, we present a comprehensive study on the development of novel materials for high-performance optoelectronic devices, encompassing photoactive polymer donors, non-fullerene acceptors (NFAs), interfacial interlayer materials, and processing additives. First, we designed and synthesized a series of donor polymers and NFAs to optimize light absorption, charge transport, and energy level alignment. To further control the nanoscale morphology of the bulk-heterojunction (BHJ) active layer, strategic processing additives were introduced, which successfully suppressed charge recombination and facilitated efficient exciton dissociation. Furthermore, novel electron-transporting interlayer materials were developed to improve charge extraction and reduce interface resistance.
