ORGS4-0753
Counterion-Regulated Electrolyte-Gated Synaptic Transistors for Reservoir Computing
Topic
GS4. Graduate Student Oral Session IV: Polymers for Electronics, Photonics, and Energy
When and Where
Sep 28, 2026
14:36 - 14:48
Room 104
Session Chairs
Hobeom KIM
Giwon LEE
Hyeong Jun KIM
Presenter(s)
Myeongjin An (Seoul National University of Science and Technology)
Co-Author(s)
Abstract
Reservoir computing (RC) is a neural network-based paradigm for efficient time-series signal processing. Despite the potential of electrolyte-gated synaptic transistors (EGSTs) as physical reservoirs, EGST-based RC studies remain limited, and the role of electrolyte anion molecular design in governing reservoir dynamics has not been established. Here, we demonstrate that the fluorinated substituent structure of sulfonimide anions controls the ion-doping behavior of EGSTs and reservoir state separability. By comparing P-PFSI, P-TFSI, and P-FSI with a common phosphonium cation, we identify the FSI anion as exhibiting the highest electrochemical doping level and superior reservoir state separability. The localized negative charge distribution of FSI enhances polaron charge compensation efficiency, leading to a wide EPSC dynamic range and sufficient fading memory that enable temporal input patterns to be mapped into more distinguishable reservoir states. These results highlight molecular-level anion design as an effective materials strategy for enhancing RC performance in EGST-based physical reservoirs.
