POS5-0641
Ion-Retentive Semi-IPN Framework for Bio-stable, Anisotropic Ion Transport
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Jong hwi Kim (Hanyang university)
Co-Author(s)
Abstract
Bioelectronics has expanded from being for patients and doctors to early detection and disease prevention for routine health monitoring, and interest in feedback sensors that monitor living organisms in real time has increased. OECT(Organic electrochemical transistor) has intrinsic ion-electron coupling and memory effect enabling this promising biosensor platform by quantifying the ionic metabolites in the biological condition. However, slow switching speed, faradaic side reaction which causes side effect and material instability is still challenges, limiting its practical use.
Beyond simply increasing the amplification performance of the device, reducing the activation energy of the ion injection at the electrolyte-semiconductor interface can be a breakthrough strategy to completely overcome these shortcomings. This ensures sufficient implantation of ions with only a small amount of motivation, providing low voltage operation and high switching speed. However, at the same time, it can cause side effects that weaken the memory effect. Therefore, the electrolyte-semiconductor interface should not only facilitate ion implantation, but also be delicately controlled for unisotropic transmission.
Here, we present a funtionalized semi-IPN framework based conductive layer, which is composed of PEDOT:PSS and trichloro-silane with oxide group. Silanol is thermally crosslinked preventing the degradation of PEDOT:PSS; meanwhile, residual silanol converts to siloxide species that strongly trap penetrated cations under physiological environment. Furthermore, ion acceleration and low-power ion injection to the active layer is achieved due to the dielectric screening of oxide group.
Semi-IPN based OECT offered a low threshold voltage, fast switching speed, enhanced transconductance and memory effect, enabling the real-time and ultralow voltage consumption of biochemical sensor.
Beyond simply increasing the amplification performance of the device, reducing the activation energy of the ion injection at the electrolyte-semiconductor interface can be a breakthrough strategy to completely overcome these shortcomings. This ensures sufficient implantation of ions with only a small amount of motivation, providing low voltage operation and high switching speed. However, at the same time, it can cause side effects that weaken the memory effect. Therefore, the electrolyte-semiconductor interface should not only facilitate ion implantation, but also be delicately controlled for unisotropic transmission.
Here, we present a funtionalized semi-IPN framework based conductive layer, which is composed of PEDOT:PSS and trichloro-silane with oxide group. Silanol is thermally crosslinked preventing the degradation of PEDOT:PSS; meanwhile, residual silanol converts to siloxide species that strongly trap penetrated cations under physiological environment. Furthermore, ion acceleration and low-power ion injection to the active layer is achieved due to the dielectric screening of oxide group.
Semi-IPN based OECT offered a low threshold voltage, fast switching speed, enhanced transconductance and memory effect, enabling the real-time and ultralow voltage consumption of biochemical sensor.
