POS5-0351
Engineering Active Layers for Synaptic Plasticity in Organic Electrochemical Transistors
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Soohyun Noh (Korea Research Institute of Chemical Technology)
Co-Author(s)
Abstract
Organic electrochemical transistors (OECTs) have attracted significant attention as promising platforms for neuromorphic computing owing to their carrier–ion coupling, mixed ionic/electronic conduction, and low-voltage operation. Despite growing interest in OECT-based neuromorphic devices, prior efforts have largely centered on demonstrating synaptic functionalities within specific material systems or device architectures, leaving the fundamental active-layer design principles that govern synaptic operation insufficiently understood. Here, we establish the design roles of key active-layer components, including the polymer semiconductor, electrolyte, and gate electrode, in optimizing synaptic performance in OECTs. By systematically modulating semiconductor side chains and electrolyte ion type/size, we reveal the role of charge carrier–ion interactions in regulating short-term and long-term plasticity behaviors. Furthermore, we demonstrate that the capacitance of the gate electrode is a critical factor in modulating synaptic behavior by tuning the distribution of interfacial potential applied to the channel. These findings provide important design guidelines for engineering active layers and device architectures toward high-performance OECT-based neuromorphic devices.
