Storage-Stable Metal-Organic Resists for Extreme Ultraviolet Lithography

The development of extreme ultraviolet (EUV) photoresists for next-generation semiconductor manufacturing requires moving beyond conventional polymer-based materials toward the rational molecular design of metal–organic complexes and a fundamental understanding of their structure–property relationships. In this presentation, I will introduce our recent efforts to develop high-sensitivity EUV photoresists based on tin (Sn) and antimony (Sb) complexes, highlighting both the performance achieved and the key limitations identified during their development. I will then discuss strategies for overcoming these challenges, with particular emphasis on rigorous molecular and structural characterization and on achieving long-term stability of resist solutions during storage. Finally, I will share recent approaches to improving the chemical and solution stability of metal–organic resists, together with practical insights gained from our research, toward the development of high-performance, storage-stable resist materials for EUV lithography.