INIDS3-1677
Implication of Main-Chain Scission in Photoimaging Chemistry
Topic
IDS3. Photoresist: 50 Years of Innovation and the Next 50 Years (Sponsored by DONGJIN SEMICHEM)
When and Where
Sep 29, 2026
16:40 - 17:05
Room 201
Session Chairs
Gregory DENBEAUX
Presenter(s)
Myungwoong Kim (Inha University)
Co-Author(s)
Abstract
We discuss the rational design of a functional copolymer platform of which backbone can be degraded by external stimuli such as UV light and acid. This design was realized by two different ways: (i) reversible addition-fragmentation chain transfer (RAFT) polymerization with a unique RAFT agent which bear a photo- or acid-labile functionality, and (ii) cationic copolymerization leading to acid-sensitive acetal units along the backbone. The evolution of the copolymer structure is emphasized towards improved photoimaging performances for the formation of patterns for organic light-emitting diode as well as semiconducting devices. The architectural and structural variations at a molecular level in the copolymers are crucial for not only improve the sensitivity of the photoimaging copolymers, but also for the preservation of the main component structures and hence, essential properties in the copolymers that have been employed in the conventional photoimaging materials. This talk finally highlights the importance of rationally designing main-chain scission-type light-sensitive materials that maintain the core structure of conventional materials, making them highly compatible and desirable for standard organic electronic device fabrication processes.
