INIDS5-1672
Defect Engineering of Metal-Halide Perovskites for Next-Generation Optoelectronics
Topic
IDS5. Frontiers in Advanced Polymeric Materials (Sponsored by Toray Science Foundation)
When and Where
Sep 29, 2026
15:50 - 16:10
Room 105
Session Chairs
Kang Hee Ku
Presenter(s)
Hobeom Kim (Gwangju Institute of Science and Technology (GIST))
Co-Author(s)
Abstract
Metal-halide perovskites are a highly promising material for next-generation optoelectronic devices such as light-emitting diodes (LEDs) and solar cells. Although device performance has improved significantly, internal defects remain a critical challenge for practical application. Defects in perovskites quench charge carriers via non-radiative recombination, degrading optoelectronic performance. In addition, defect migration gives rise to peculiar electronic and optical behavior of devices such as current-voltage hysteresis and luminance overshooting, which severely impact device stability. To address these challenges, various defect passivation strategies have been proposed.
In this talk, we discuss approaches for defect passivation in metal-halide perovskites, involving organic chemical reagents and low-dimensional perovskites, as well as the incorporation of perovskite polytypes such as a corner-sharing 6H phase to achieve coherent intervention at the halide position, effectively screening halide defect formation. Our results demonstrate that these defect engineering strategies enhance both the optoelectronic characteristics and the stability of LEDs and solar cells. Furthermore, we highlight the detrimental impact of shallow-level defects, particularly the iodide vacancy (VI+), which has conventionally been regarded as benign. Our findings pave the way for the employment of perovskite polytypes to achieve high-performing perovskite optoelectronic devices, while also elucidating the necessity of engineering shallow-level defects.
Acknowledgement: This work was supported by the National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIT) (RS-2024-00342991 and RS-2024-00437887), by the Korea Basic Science Institute (National Research Facilities and Equipment Center) grant funded by the Ministry of Science and ICT (RS-2026-25500164), and by the Korea Toray Science Foundation.
In this talk, we discuss approaches for defect passivation in metal-halide perovskites, involving organic chemical reagents and low-dimensional perovskites, as well as the incorporation of perovskite polytypes such as a corner-sharing 6H phase to achieve coherent intervention at the halide position, effectively screening halide defect formation. Our results demonstrate that these defect engineering strategies enhance both the optoelectronic characteristics and the stability of LEDs and solar cells. Furthermore, we highlight the detrimental impact of shallow-level defects, particularly the iodide vacancy (VI+), which has conventionally been regarded as benign. Our findings pave the way for the employment of perovskite polytypes to achieve high-performing perovskite optoelectronic devices, while also elucidating the necessity of engineering shallow-level defects.
Acknowledgement: This work was supported by the National Research Foundation of Korea (NRF) grants funded by the Korea government (MSIT) (RS-2024-00342991 and RS-2024-00437887), by the Korea Basic Science Institute (National Research Facilities and Equipment Center) grant funded by the Ministry of Science and ICT (RS-2026-25500164), and by the Korea Toray Science Foundation.
