INIDS3-1604
From Molecular Simulations to Artificial Intelligence for Advanced Patterning Materials Designs
Topic
IDS3. Photoresist: 50 Years of Innovation and the Next 50 Years (Sponsored by DONGJIN SEMICHEM)
When and Where
Sep 29, 2026
16:00 - 16:30
Room 201
Session Chairs
Hyun-Dam JEONG
Presenter(s)
Su-Mi Hur (Daegu Gyeongbuk Institute of Science & Technology)
Co-Author(s)
Abstract
Controlling line edge roughness (LER) while pushing resolution and sensitivity in extreme ultraviolet (EUV) lithography requires molecular-level understanding of the patterning process. This presentation traces how our group's approach to this problem has evolved from mechanism-resolving molecular simulation toward data-driven materials design. While photon shot noise and acid diffusion are conventionally regarded as the dominant contributors to LER in chemically amplified resists, our coarse-grained molecular modeling indicates that the configuration and spatial arrangement of polymer chains near the interface also play a decisive role, and we will show how chain orientation and underlayer design can be exploited to suppress the resulting roughness. Extending this framework, we integrate EUV patterning with directed self-assembly (DSA) to push resolution and defect control beyond the limits of either approach alone. In parallel, we pursue data-driven materials exploration based on our previously developed HAPPY polymer representation, which we are extending toward inverse design of synthetically accessible resist monomers under data-scarce conditions.
