POS4-1521
Fabrication of Highly Ordered Cu Nanopatterns via Interfacial Control of Vertically Oriented PS-b-PMMA
Topic
S4. Colloids, Interfaces, and Molecular Assemblies for Functional Soft Materials
When and Where
Oct 1, 2026
08:30 - 09:30
Room 301 (Grand Ballroom)
Session Chairs
Jinkee HONG
Ki Su KIM
Presenter(s)
Kyongmoon Ko (Chungnam National University)
Co-Author(s)
Abstract
In this study, highly ordered Cu nanopatterns were fabricated using vertically oridented lamellar and cylindrical nanostructures formed by PS-b-PMMA self-assembly. Hydroxyl-terminated random copolymer (PS-r-PMMA) brushes were introduced onto the substrate to regulate interfacial interactions and promote perpendicular domain orientation. The effects of the PS fraction in the random brush (fPS) and thermal annealing time on the orientation and ordering of the BCP domains were systemically investigated.
Under the optimized random brush composition and thermal annealing conditions, highly ordered perpendicular lamellae and cylinders with substantially reduced defect density were obtained, as confirmed by SEM images.
Following selective removal of the PMMA domains using Ar/O2 or O2-based reactive ion etching, the remaining PS nanostructures were employed as templates for metal patterning. A thin Cu layer was deposited by electron-beam evaporation, followed by sonication-assisted lift-off in toluene. Consequently, Cu nanowire patterns and Cu nanodot arrays were formed from the lamellar and cylinderical templates, respectively.
The resulting Cu nanowire and nanodot arrays offer potential applications in catalysis, high-sensitivity sensors, Surface-Enhanced Raman Scattering (SERS) substrates, and electronic and photonic devices, and may provide a useful platform for the development of the next-generation electronic materials.
Under the optimized random brush composition and thermal annealing conditions, highly ordered perpendicular lamellae and cylinders with substantially reduced defect density were obtained, as confirmed by SEM images.
Following selective removal of the PMMA domains using Ar/O2 or O2-based reactive ion etching, the remaining PS nanostructures were employed as templates for metal patterning. A thin Cu layer was deposited by electron-beam evaporation, followed by sonication-assisted lift-off in toluene. Consequently, Cu nanowire patterns and Cu nanodot arrays were formed from the lamellar and cylinderical templates, respectively.
The resulting Cu nanowire and nanodot arrays offer potential applications in catalysis, high-sensitivity sensors, Surface-Enhanced Raman Scattering (SERS) substrates, and electronic and photonic devices, and may provide a useful platform for the development of the next-generation electronic materials.
