POS5-1509
Crystallinity-driven Enhancement of Electronic and Optical Properties in Mixed Pb/Sn Perovskite
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Junpyo Lee (Seoul National University)
Co-Author(s)
Abstract
Halide perovskites have attracted significant attention in next-generation charge transport and optoelectronic applications due to their outstanding properties, including high absorption coefficient, defect tolerance and solution processability. In particular, Pb/Sn Mixed perovskites, which can combine the advantageous properties of both lead-based and tin based perovskites, have emerged as a promising material for next-generation electronic and optoelectronic devices. Despite these advantages, their application in field-effect transistors (FETs) and optoelectronic devices remains limited by relatively low carrier mobility and optical performance originating from rapid crystallization and structural disorder.
Herein, we employ a co-additive strategy using organic halide additives to regulate the crystallization of Pb/Sn mixed perovskite and demonstrate significant enhancements in charge transport and optoelectronic properties driven by modified crystal structure. This work highlights the importance of crystal structure in governing the electronic properties of halide perovskites and provides a practical strategy for realizing high-mobility and highly-reliable perovskite field-effect transistors and high-performance optoelectronic devices.
Herein, we employ a co-additive strategy using organic halide additives to regulate the crystallization of Pb/Sn mixed perovskite and demonstrate significant enhancements in charge transport and optoelectronic properties driven by modified crystal structure. This work highlights the importance of crystal structure in governing the electronic properties of halide perovskites and provides a practical strategy for realizing high-mobility and highly-reliable perovskite field-effect transistors and high-performance optoelectronic devices.
