POS5-1500
Accurate Determination of Volumetric Carrier Density in Organic Electrochemical Transistors
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Seung Hyeon Back (Inha university)
Co-Author(s)
Abstract
Accurate estimation of volumetric carrier density is essential for understanding charge accumulation and transport in organic electrochemical transistors (OECTs). The accumulated charge can be quantified by integrating the gate current over the applied gate voltage. When combined with simultaneously measured drain current–gate voltage (ID–VG) characteristics, the resulting carrier density enables the electronic conductivity to be analyzed as a function of doping level, allowing the respective contributions of charge accumulation and average carrier mobility to be distinguished. However, the reliability of this approach depends not only on the charge-integration procedure but also on the electrical measurement conditions and device geometry. In particular, drain bias, gate-voltage scan rate, and semiconductor area can significantly influence the gate current characteristics, including the charging-peak shape, position, and peak separation, thereby introducing uncertainty into the extracted carrier density. Here, we systematically investigate these measurement parameters to establish practical guidelines for accurately determining volumetric carrier density from integrated gate-charge measurements in OECTs.
