Molecularly Engineered Self-Assembled Monolayer Interfaces for Efficient and Stable Green Perovskite LEDs
When and Where
Presenter(s)
Co-Author(s)
Abstract
Perovskite light-emitting diodes (PeLEDs) are promising candidates for next-generation displays owing to their narrow emission linewidth, wide color gamut, and low-temperature solution processing. Efficient, stable green PeLEDs require a bottom hole-transport interface with favorable energy level alignment and uniform hole injection that suppresses interfacial recombination. Self-assembled monolayers (SAMs) are attractive hole-transport layers owing to their ultrathin, conformal nature and tunable interfacial dipoles, but conventional SAM molecules tend to aggregate in solution, causing incomplete and non-uniform adsorption on transparent conducting oxides. The resulting energetic disorder creates hole-injection barriers and trap states at the buried interface, leading to charge imbalance, trap-assisted recombination, efficiency roll-off, and limited stability.
Here, we develop a molecularly engineered SAM-based HTL for green PeLEDs. Dynamic light scattering and molecular simulations reveal improved solution-state dispersion of the SAM molecules, while surface and photoelectron analyses show enhanced coverage, stronger interfacial binding, a favorable work function shift, and a uniform contact-potential distribution. Photoluminescence, electrical, and transient electroluminescence analyses consistently indicate suppressed trap-assisted recombination and balanced hole injection. The engineered SAM enables green PeLEDs with a maximum EQE of 25.7% and a T₅₀ of 4.5 h at 100 cd m⁻², a significant improvement over control devices, demonstrating molecular-level SAM engineering as an effective route toward efficient, stable PeLEDs.
This research was supported by the National Research Foundation of Korea (NRF) grants funded by the Korean government (MSIT) (RS-2024-00342991, RS-2024-00437887, and RS-2026-25524240), and by the Korea Basic Science Institute grant funded by the Ministry of Science and ICT (RS-2026-25500164).












