POS5-1486
Process Optimization of PbS Quantum Dot Near-Infrared Photodetectors
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Bumseok Ko (Nanophotonic System Research Center, Korea Institute of Science and Technology)
Co-Author(s)
Abstract
PbS quantum dots (QDs) are promising materials for near-infrared photodetectors because their bandgap can be tuned to target specific wavelength ranges. Most laboratory scale PbS QD photodetectors have been studied in bottom-illumination structures fabricated on transparent ITO/glass substrates. However, direct integration of PbS QD photodetectors onto opaque readout integrated circuit (ROIC) substrates requires a top-illumination device structure. In this study, top-illuminated PbS QD photodetectors were fabricated on SiO2/Al substrates. The effects of the ZnO electron transporting layer, QD coating conditions, and MoO₃ deposition conditions were systematically investigated by current–voltage measurements under dark and illuminated conditions and wavelength-dependent external quantum efficiency measurements. Optimization of these conditions reduced the dark current while maintaining the photocurrent, resulting in improved external quantum efficiency. These results demonstrate the feasibility of fabricating top-illuminated PbS QD photodetectors on opaque substrates and provide a basis for their future integration with ROIC-based image sensors.
