POS5-1415
Organic Non-Volatile Floating-Gate Memory Using Self-Assembled Gold Nanodot Arrays
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Jong in Yoon (Inha University)
Co-Author(s)
Abstract
Developing reliable organic non-volatile memory transistors requires long-range structural order within the charge-trapping layer and pristine semiconductor interfaces. This study demonstrates a highly stable organic floating-gate memory device featuring a highly ordered gold nanoparticle (AuNP) array templated by block copolymer (BCP) self-assembly. To overcome the inherent solvent orthogonality issues that degrade underlying nanostructures during top-layer deposition, we introduce a damage-free water-floating film transfer method for the poly(3-hexylthiophene) (P3HT) active layer. This advanced integration successfully decouples the active layer processing from the floating-gate formation, enabling an atomically sharp interface and optimal charge injection. The uniformity of the AuNP arrays ensures discrete and uniform energy levels, facilitating precise charge-trapping and releasing kinetics. As a result, the fabricated memory devices deliver highly reproducible hysteresis characteristics, wide memory windows, and excellent ambient operational stability. Our findings demonstrate that combining self-assembled nanodot arrays with orthogonal film transfer is a highly scalable and robust approach for next-generation flexible memory systems.
