Slot-Die-Printed MoS₂ Transistor Arrays with a Sodium-Modified Alumina Dielectric

Solution-processed two-dimensional materials offer a promising route toward the scalable fabrication of next-generation electronic devices. Nevertheless, conventional solution-based approaches generally compromise material quality when scaled to large areas, limiting their practical use. Here, we demonstrate the fabrication of wafer-scale arrays of molybdenum disulfide transistors using a commercially available slot-die printing technique. Printable inks composed of molybdenum disulfide nanosheets and sodium-incorporated alumina are developed for the semiconductor and gate dielectric layers, respectively. The resulting transistors achieve average carrier mobilities of 80.0 cm² V⁻¹ s⁻¹ from field-effect transistor measurements and 132.9 cm² V⁻¹ s⁻¹ from room-temperature Hall measurements. This enhanced carrier mobility is attributed to the sodium-incorporated alumina dielectric, which promotes band-like carrier transport through the molybdenum-disulfide-nanosheet thin-film networks. The printed transistors are further integrated into several electronic circuits, including NOT, NOR, and NAND logic gates, as well as static random-access memory.