KES5-1344
Tin-Halide Perovskite Semiconductors for Near-Infrared Light-Emitting Sources
When and Where
Sep 29, 2026
16:40 - 17:05
Presenter(s)
Annamaria Petrozza (Italian Institute of Tecnology)
Co-Author(s)
Abstract
Light-emitting diodes (LED) with different emission spectra are widely used in our daily life for a variety of applications. However, due to fundamental restrictions of light-emitting materials, the development of near-infrared LEDs (NIR-LEDs) is still modest. Recently, solution-processed tin-halide perovskites (THPs) have emerged as one of the most promising light-emitting materials for NIR-LED applications. Here, first, how the defects chemistry of THPs affects the light emission efficiency of the semiconductor will be presented. Then, efforts in materials engineering to design and master the electronic properties of THP films will be discussed. In particular, a facile yet highly effective strategy will be presented to master the defects activity in THPs by developing self-encapsulated tin-halide perovskite films. The resulting film exhibits a significantly reduced trap density and mitigated p-doping density such that it is exploited to boost radiative charge recombination to reach a photoluminescence quantum yield approaching 50%. Leveraging these advancements, NIR-LEDs demonstrate a peak external quantum efficiency > 16%, accompanied by a substantial improvement in operational lifetime.
