POS5-0064
High-performance High-k Dielectric Metal Oxide TFTs with Azide-functionalized Coordination Ligands
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Suryeon Jang (POSTECH)
Co-Author(s)
Abstract
Developing stretchable oxide thin-film transistors (TFTs) with high electrical performance is essential for emerging wearable technologies, yet soft substrate integration continues to pose significant engineering challenges. Here, we demonstrate a fully solution-processed, stretchable all-oxide TFT fabricated directly on a custom-engineered polyimide (PI) substrate. The exceptional stretchability is enabled by our novel copolyimide, synthesized by precisely controlling the ratio of rigid (BPDA, PMDA) and flexible (4,4’-ODA) monomers to maximize elongation while maintaining high thermal stability. The active layers employ an organic-inorganic hybrid strategy, where metal oxide nanoparticles are functionalized with custom-synthesized bidentate ligands featuring azide and acetylacetonate termini and ethylene-glycol bridges, imparting stretchability to the inorganic films. Using this ligand, we fabricated a high-k zirconium dioxide (ZrO₂) gate dielectric and an indium oxide (In₂O₃)/zinc oxide (ZnO) heterojunction structure to realize a fully solution-patterned device. The resulting TFTs, fabricated on a 2-μm-thin PI substrate, exhibit a compelling set of performance metrics, characterized by a high field-effect mobility of approximately 40cm² V⁻¹ s⁻¹ and an on/off ratio of ~10⁶, while maintaining stable operation under 15% tensile strain. Ultimately, this comprehensive solution-processing strategy demonstrates a highly effective route for realizing robust, high-performance oxide electronics on intrinsically stretchable platforms, paving the way for next-generation skin-compatible devices.
