POS7-1307
Tone-Changable Sn-Based Hybrid Photoresists for EUV Lithography
Topic
S7. Innovations in Polymeric Composites: From Design and Processing to Industrial Applications
When and Where
Sep 30, 2026
08:30 - 09:30
Room 301 (Grand Ballroom)
Session Chairs
Heesuk KIM
Jinhye BAE
Presenter(s)
Seunghyun Lee (Ajou university)
Co-Author(s)
Abstract
EUV lithography requires ultrathin photoresist films with high EUV absorption and etch resistance for reliable nanoscale patterning. Although organic–inorganic hybrid resists have been explored to meet these requirements, existing approaches often require complex synthesis or additional vapor-phase processing, limiting their compatibility with conventional resist workflows.
In this study, we developed organic–inorganic hybrid photoresists by directly blending a tin precursor with a chemically amplified resist (CAR). Increasing the tin content promoted coordination network formation, enabling composition-dependent positive-to-negative tone conversion. In the positive-tone regime, tin incorporation enhanced residual film retention and EUV sensitivity while preserving nanoscale pattern fidelity. Optimization of the tin content enabled the resolution of 21 nm pillar patterns, while the optimized formulation reduced the dose-to-size by 16.4% and 23.7% at critical dimensions of 21 and 27 nm, respectively, compared with the pristine CAR. In the negative-tone regime, sufficient coordination between the resin and tin species promoted the formation of a stable organic–inorganic network, resulting in enhanced plasma etch durability, mechanical stiffness and solvent resistance. These findings establish a simple, cost-effective, and process-compatible strategy for the development of next-generation EUV photoresists.
In this study, we developed organic–inorganic hybrid photoresists by directly blending a tin precursor with a chemically amplified resist (CAR). Increasing the tin content promoted coordination network formation, enabling composition-dependent positive-to-negative tone conversion. In the positive-tone regime, tin incorporation enhanced residual film retention and EUV sensitivity while preserving nanoscale pattern fidelity. Optimization of the tin content enabled the resolution of 21 nm pillar patterns, while the optimized formulation reduced the dose-to-size by 16.4% and 23.7% at critical dimensions of 21 and 27 nm, respectively, compared with the pristine CAR. In the negative-tone regime, sufficient coordination between the resin and tin species promoted the formation of a stable organic–inorganic network, resulting in enhanced plasma etch durability, mechanical stiffness and solvent resistance. These findings establish a simple, cost-effective, and process-compatible strategy for the development of next-generation EUV photoresists.
