POS5-1283
Photomultiplication Type Perovskite Photodetectors Enabled by Dopant Controlled Bulk Heterojunction
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Taegeon Lee (unversity of seoul)
Co-Author(s)
Abstract
With the increasing necessity for high-performance image sensors and growing interest in the IoT environment, the development of high-performance photodetectors has become increasingly important. Although avalanche photodiodes (APDs) offer high current gain, they are limited by complex fabrication processes, high manufacturing costs, and high driving voltages. Consequently, photomultiplication type photodetectors (PM type PDs), capable of achieving high gain at low driving voltages, have attracted significant attention. PM type PDs achieve external quantum efficiency (EQE) exceeding 100% through tunneling injection induced by charge trapping and band bending at the electrode interface. However, conventional organic-based PM type PDs suffer from low exciton dissociation yields compared to PN junction devices. To address this, perovskite PM type PDs utilizing dopants have been explored due to perovskite's superior light absorption, low exciton binding energy, and long diffusion length. However, dopant-based approaches face performance degradation due to the difficulty in controlling trap concentration.
In this study, In this study, we propose a perovskite device structure integrated with organic bulk heterojunctions(BHJ) that form traps, replacing the conventional doping method. By optimizing the BHJ layer's molecular structure and energy levels (HOMO/LUMO), we successfully fabricated devices exhibiting a photomultiplication effect. The manufactured device demonstrates a significantly enhanced EQE (>100%) across a broadband range, surpassing the performance of conventional diode-structured perovskite photodetectors.
In this study, In this study, we propose a perovskite device structure integrated with organic bulk heterojunctions(BHJ) that form traps, replacing the conventional doping method. By optimizing the BHJ layer's molecular structure and energy levels (HOMO/LUMO), we successfully fabricated devices exhibiting a photomultiplication effect. The manufactured device demonstrates a significantly enhanced EQE (>100%) across a broadband range, surpassing the performance of conventional diode-structured perovskite photodetectors.
