POS5-1187
Hole-Transport Layer Engineering for Improved Charge Transport in FAPbI₃-Based Perovskite Solar Cells
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Gyeongho Jo (Kongju National University)
Co-Author(s)
Abstract
FAPbI₃-based perovskite solar cells have attracted considerable attention owing to their suitable bandgap, strong light absorption, and high power conversion efficiency. However, further improvement in device performance is still limited by inefficient charge extraction, interfacial recombination, and operational stability. In particular, the hole-transport layer (HTL) plays a critical role in extracting holes from the perovskite absorber and transporting them to the metal electrode, while also affecting interfacial charge accumulation and recombination.
In this study, FAPbI₃-based perovskite solar cells were fabricated to investigate the effect of HTL engineering on charge transport and photovoltaic performance. Representative organic HTLs and composition/additive-modified HTLs were comparatively introduced into the device structure, and their influence on device characteristics was systematically analyzed. Photovoltaic parameters, including open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency, were evaluated using current density-voltage measurements. External quantum efficiency was measured to confirm the photocurrent response. Series and shunt resistance values, together with forward and reverse scan hysteresis, were analyzed to understand charge transport and leakage behavior. X-ray diffraction was used to examine the crystalline structure of the perovskite films, while surface microscopy was used to investigate film morphology and uniformity.
This comparative study clarifies the relationship between HTL modification, interfacial charge transport, and device performance, providing useful guidelines for designing efficient HTLs for FAPbI₃-based perovskite solar cells.
In this study, FAPbI₃-based perovskite solar cells were fabricated to investigate the effect of HTL engineering on charge transport and photovoltaic performance. Representative organic HTLs and composition/additive-modified HTLs were comparatively introduced into the device structure, and their influence on device characteristics was systematically analyzed. Photovoltaic parameters, including open-circuit voltage, short-circuit current density, fill factor, and power conversion efficiency, were evaluated using current density-voltage measurements. External quantum efficiency was measured to confirm the photocurrent response. Series and shunt resistance values, together with forward and reverse scan hysteresis, were analyzed to understand charge transport and leakage behavior. X-ray diffraction was used to examine the crystalline structure of the perovskite films, while surface microscopy was used to investigate film morphology and uniformity.
This comparative study clarifies the relationship between HTL modification, interfacial charge transport, and device performance, providing useful guidelines for designing efficient HTLs for FAPbI₃-based perovskite solar cells.
