POS5-1100
Large-Scale Indium Selenides Transistors for High-Performance Flexible Electronics
When and Where
Nov 30, -0001
00:00 - 00:00
Presenter(s)
Heeseol Jeon (Korea Research Institute of Chemical Technology)
Co-Author(s)
Abstract
Ultrathin indium selenides (InSe and κ-In2Se3) are attractive two-dimensional (2D) semiconductors for flexible electronics, offering high intrinsic carrier mobility and unique polymorphic properties. Unlike conventional 2D transition metal dichalcogenides (TMDs) that require high-temperature growth, these materials can be deposited by thermal evaporation—a scalable, low-temperature process well-suited to flexible substrates.
Here, we report the successful fabrication of indium selenide thin-film transistors and logic circuits on flexible substrates using thermally deposited, wafer-scale (4-inch) films. Through optimized deposition and interface engineering, we achieved high device yield across the wafer, along with strong electrical performance (high mobility, on/off ratio) and stable operation under repeated mechanical bending. We also demonstrate flexible logic circuits, including inverters, showing this platform’s potential for scalable, high-performance flexible electronics.
Here, we report the successful fabrication of indium selenide thin-film transistors and logic circuits on flexible substrates using thermally deposited, wafer-scale (4-inch) films. Through optimized deposition and interface engineering, we achieved high device yield across the wafer, along with strong electrical performance (high mobility, on/off ratio) and stable operation under repeated mechanical bending. We also demonstrate flexible logic circuits, including inverters, showing this platform’s potential for scalable, high-performance flexible electronics.
