The Polymer Society of Korea

분자전자 부문위원회

포스터발표

Effect of Organic Molecule-Induced Charge Transfer on Threshold Voltage Control of Both n‑MoS₂ and p‑MoTe₂ Transistors

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A method to improve the performance of transition metal dichalcogenide (TMD) field-effect transistors (FETs) is discussed. TMD FETs often have high threshold voltages and leakage currents, which can be problematic. The study introduces a technique to adjust the threshold voltages (V_th) of both p-type and n-type TMD FETs by depositing organic small molecules on the channels. Specifically, the organic hexaazatriphenylenehexacarbonitrile (HAT-CN) molecule is found to effectively shift the V_th of both types of FETs toward 0 V. This adjustment enhances the performance of a complementary metal-oxide-semiconductor (CMOS) inverter using p-MoTe₂ and n-MoS₂ channels, resulting in better voltage gain and lower power consumption. Additionally, when integrated into an organic light emitting diode (OLED) pixel circuit, the HAT-CN-treated TMD FETs enable complete ON/OFF switching of the OLED pixel, which was not possible without the HAT-CN film on the TMD channel.

3PS-97

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