Highly-stable, low-voltage operating oxide thin film transistors via sol-gel quaternary oxide dielectric
발표자
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초록
내용
This research focused on developing a high-performance quaternary Al-Hf-Zr-O (AHZO) dielectric film using a simplified sol-gel technique. By systematically adjusting the precursor ratios of AlOx, HfOx, and ZrOx, and leveraging their distinct properties, the study fine-tunes the stoichiometry to enhance the dielectric characteristics of the AHZO film. The resulting films exhibit crucial attributes for TFT operation, including a dielectric constant greater than 11, a robust breakdown field exceeding 5 MV/cm, and a minimal leakage current density below 10-5.5 A/cm2. The integration of AHZO with a sol-gel-derived In-Ga-Zn-O (IGZO) active layer significantly enhances device performance and reliability under bias stress, facilitated by the amorphous and smooth nature of the AHZO layer. Electrical analysis confirms that AHZO/IGZO TFTs outperform those using conventional binary oxide dielectrics, highlighting the strategic importance of AHZO in advanced electronic applications.