Investigating the Impact of Terminal Functional Group (-NH<sub>2</sub>, -CH<sub>3</sub>, and -CF<sub>3</sub>) in Self-Assembled Trimethoxysilylpropyl on the Performance of Hole Injection Layers in Optoelectronic Devices
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We report the fabrication of an optoelectronic device (OED) achieved through the modification of the indium tin oxide (ITO) surface with self-assembled trimethoxysilylpropyl materials containing various types of terminal groups, such as -NH2, -CH3, and -CF3, aiming for energy-level alignment of the ITO electrode. Tuning the energy level alignment of the electrode is crucial for enhancing OED performance by optimizing charge carrier injection materials. CH3SAM and CF3SAM formed on the ITO surface serve as the hole injection layer in the OED device, effectively reducing turn-on and driven voltages while increasing luminance and current density. By forming ITO with various SAMs, the surface wettability decreased by factors of 2.21, 2.29, and 2.64, accompanied by a reduction in surface roughness, resulting in a smoother surface, from 1.18nm (Rq-Bare-ITO) to 1.15nm (Rq-NH2,), 0.91 (Rq-CH3) and 0.26nm (Rq-CF3).