Hybrid Perovskite-Polymer Transistors by Multicomponent Engineering
발표자
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초록
내용
In this study, we demonstrate the engineering of solvents, solution-processed ionic polymer dielectric, and perovskite-conjugated polymer semiconductor blends for high-performance and low-voltage orthogonally engineered ionic-gated transistors (IGTs). The fabricated IGTs with an optimized formamidinium lead triiodide (FAPbI3)-poly(3-hexylthiophene-2,5-diyl) (P3HT) blend showed high room-temperature hole mobility of >9 cm2 V−1 s−1 under ≤ −1.5 V operation with an on/off ratio of >103, high reproducibility, and excellent operational stability under ambient conditions. These findings indicate significant progress toward high-performance, mechanically stable, and flexible hybrid perovskite transistors, physiological sensing devices, and related electronics.