High mobility furan-substituted benzo [1,2-b:4,5:-b'] dithiophene-based polymer semiconductor for organic transistors and photovoltaics
발표자
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초록
내용
Here, furan, thiophene, and 2,6-Bis(trimethytin)-4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b′]dithiophene (BDT) building blocks for conjugated polymers are synthesized by controlling the contents of thienyl and furyl units during polymerization and the electrical characteristics are reported. The synthesized furan-containing polymers exhibited smoother surface morphology, desirable solubility, deeper highest occupied molecular orbital (HOMO) levels, increased band gap, and improved film crystallinity due to the incorporation of a polar furan unit. Pleasingly, fully green-processed AgBiS2-based photovoltaic devices using 25% furan substituted polymer, P2, as hole transport material attained a high fill factor of 67.68% with enhanced efficiency of 5.59% while maintaining high mobility of 9.82 cm2 V–1 s–1.