Low-voltage operation of IGZO transistors with polymer electrolyte for synaptic behaviors
발표자
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초록
내용
Rising demands for energy-efficient computation have driven the development of neuromorphic electronics, mimicking human brain synaptic functions while enabling information storage. Particularly, polymer electrolyte-gated transistors (EGTs) have been proven pivotal in neuromorphic devices due to their low-voltage operation and wide electrochemical stability. Addressing the lack of studies on ion-dependent conductivity, especially the anion effect in solid electrolytes, is essential to improve the response speed of EGTs. In this study, we used lithium-containing polymer electrolytes to investigate anion-dependent synaptic properties of EGTs with IGZO as the active layer. Electrical and synaptic characteristics were analyzed using electrochemical impedance spectroscopy (EIS), short-term plasticity (STP), and long-term plasticity (LTP). This understanding of neuromorphic elements will greatly advance next-generation robotics, bioelectronics, and neuroscience technologies.