Enhanced Performance of 2D Sn Perovskite Transistorby Incorporating Alkyl-size Matched Ammonium Halide Additives
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Tin(Sn) halide perovskite is a promising material for p-type field-effect transistor(FET) due to its non-toxicity and high hole mobility. 2D Sn perovskite is known for its superior stability and reduced ion migration compared to 3D Sn perovskite, attributed to the structural feature of bulky organic A site cations. However, it remains insufficiently stable against external moisture and oxygen. To address this issue, many studies have been focused on enhancing the quality and stability of its films. Here, we incorporate alkyl ammonium halide additives with different alkyl chain lengths into 2D Sn perovskite for improving the performance and stability of FETs. We confirmed that optimally sized PAI additives effectively passivate A-site vacancies and reduce oxidation by stabilizing the crystal structure. The optimized device exhibits enhanced FET performance metrics(μFE =1.76 cm²/Vs and Ion/off =6.1 × 10⁵), along with reduced hysteresis and increased device stability.