Controlling Fluorination Density of Soluble Polyimide Gate Dielectrics and its Influence on Organic Crystal Growth and Device Operational Stability
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Fluorinated polyimides (PIs) are among the most promising candidates for gate dielectric materials because of their solution processability and outstanding chemical, thermal, and operational stabilities. However, the relationship between F density of PIs and molecular crystal growth on PI thin films has not been systematically studied. Herein, five soluble PIs with different F densities were synthesized, and the correlation between fluorination and thin-film properties was investigated. Not only were their dielectric properties modulated, but the growth modes of organic molecules on the thin-films were also changed with increasing F density, as confirmed by surface and crystallographic analyses. Moreover, the low polarizability of C-F bonds resulted in high operational stability of OFETs, and stable organic complementary circuits were demonstrated. We believe that these results will provide valuable insights into material design based on molecular assembly on polymer dielectrics.