High-Performance p-Type Tin Halide Perovskite Transistor with Non-Volatile Methylammonium Chloride
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초록
내용
Tin halide perovskites exhibit excellent hole mobility, making them ideal for high-performance p-type transistors. However, their inherent instability makes them challenging to produce high-quality thin films with three-dimensional (3D) crystals. Here, we demonstrate that substituting A- and X-site ions with methylammonium chloride (MACl) significantly stabilizes the 3D formamidinium tin iodide (FASnI3). Unlike in lead halide perovskites, where MACl acts as a volatile intermediate, our findings reveal that MA and Cl substitute into the tin halide perovskite structure, maximizing structural stability. This leads to the formation of uniform thin films with enhanced crystallinity and larger grain size. As a result, stable FASnI3-based transistor without hysteresis is achieved, exhibiting exceptional performance metrics–hole mobility > 80 cm²V⁻¹s⁻¹, an on/off current ratio > 3.0×10⁹, and a threshold voltage around 0 V–along with outstanding operational reliability.