Non-vacuum solution-processable Zr- and Ti-functionalized colloidal organic/inorganic nanohybrid materials for low-voltage driving printed electronics.
발표자
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초록
내용
Zr- and Ti-based colloidal organic–inorganic (O–I) hybrid sol-gel-based materials were successfully synthesized and applied as gate dielectrics for printed electronics. Herein, amphilic organic precursor and high dielectric constant (k) metal alkoxide precursors are introduced together for O-I hybrid thin film fabrication. This resulted in highly distributed O-I hybrid thin films yielding low dielectric loss high-k properties to make low-voltage operating thin film transistors (TFTs) and integrated devices via solution processing. TFTs with our O-I hybrid layers show highly stable low-voltage driving characteristics (~ 2V level) under ambient air and flexible platform. In particular, all-solution processing integrated logic devices are successfully operated with low-voltage conditions.