Quantum Dot-Based Three-Stack Tandem Near-Infrared-to-Visible Optoelectric Upconversion Devices
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초록
내용
Quantum dots (QDs) exhibit size-tunable optical properties, making them suitable for efficient light-sensing and light-emitting devices. Tandem devices that can convert near-infrared (NIR) to visible (Vis) signals can be fabricated by integrating an NIR-sensing QD device with a Vis electroluminescence (EL) QD device. However, these devices require delicate control of the QD layer during processing to prevent damage to the predeposited QD layers in tandem devices during the subsequent deposition of other functional layers. This has restricted attainable device structures for QD-based upconversion devices. Herein, we present a modular approach which involves using NIR QD-absorbing (Abs) and Vis QD-EL units as building modules, both of which feature crosslinked functional layers that exhibit structural tolerance to dissolution during subsequent solution-based processes. Through the modular approach, we fabricated a new structure that deviate from the conventional device structures and evaluated their performance.