Enhanced Ambipolar Charge Transport in D–A–A–D-type Polymer Semiconductors
발표자
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초록
내용
A simple yet effective strategy for enhancing the performance of ambipolar organic-filed-effect transistors (OFETs) and complementary metal-oxide-semiconductor (CMOS) inverters is proposed by reconfiguring the donor (D) and acceptor (A) moieties in the order D–A–A–D within the repeat units of D–A-type polymer semiconductors. Unlike conventional D–A polymer semiconductors based on cyclopentadithiophene (CDT) and pyridyl-2,1,3-thiadiazole (PT), the D–A–A–D polymer semiconductor with a CDT–PT–PT–CDT configuration (PCPPC) demonstrates hysteresis-free OFET characteristics and significantly enhanced electron and hole mobilities of 0.41 and 1.50 cm2 V-1 s-1, respectively. These improvements are attributed to the deeper conduction band edge of PCPPC compared with its D–A counterpart. Additionally, due to its superior ambipolar charge transport characteristics, CMOS inverters fabricated with PCPPC achieve an exceptionally high gain of 165.