Synthesis of Fluorinated Hole Transporting Materials to Enhance Quantum Dot Light-Emitting Diodes Performance
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Quantum dot light-emitting diodes (QD-LEDs) are promising candidates for next-generation displays due to their high color purity, which results from a narrow full-width at half-maximum of the emission spectrum, allowing for a wide color gamut. However, QD-LEDs often face efficiency loss due to imbalanced electron and hole injection in the emission layer (EML). Herein, we describe the synthesis and characterization of hole transport materials with fluorine atoms introduced at the carbazole moiety in poly((9,9-dioctylfluorenyl-2,7-diyl)-alt-(9-(2-ethylhexyl)-carbazole-3,6-diyl)) (PF8Cz). This approach reduces the energy offset between the hole transporting layer and EML, effectively lowering the highest occupied molecular orbital energy level and potentially enhancing the external quantum efficiency of InP/ZnSeS-based green QD-LEDs. Our method shows significant potential for optimizing hole injection to the EML, contributing to the advancement of QD electroluminescence-based displays.