Surface Defect Passivation of Metal Oxide-Based ETL with ZnS Nano-Patches for High Performance QLEDs
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초록
내용
Recent advances in quantum dot light emitting diodes (QLEDs) have shown significant improvements in various aspects such as luminous efficiency, and device lifetime. Due to their stability and high electron mobility, ZnO and ZnMgO have emerged as promising materials for the electron transport layer. However, inherent surface defects in metal oxides contribute to non-radioactive recombination.In this study, we propose a surface passivation technique using ZnS nano-patches to alleviate surface defects of metal oxides. The ZnS nano patch effectively reduces oxygen vacancies, minimizing exciton quenching and improving device performance. Particularly, it can be indirectly inferred that after ZnS patching, green emission decreased by 86.1% compared to ZnMgO, indicating a reduction in oxygen vacancy. In addition, the EQE max increased from 5.5% to 6.4% after ZnS patching. These results paved the way for further development in addressing the important challenges of QLED technology.