Photo-crosslinking and layer-by-layer processed OPD with remarkably suppressed dark current
발표자
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초록
내용
In order to suppress dark current, we developed a new photo-crosslinkable donor polymer PM6-Br50 by introducing bromoalkyl side-chains and pseudo-planar heterojunction (p-PHJ) structure of cross-linked donor/acceptor can be formed by layer-by-layer process without semi-orthogonal solvent, which overcomes traditional solvent limitation. In addition, we use semiconducting conjugated polyelectrolyte (TPAFS-TMA) with high conduction band to replace PEDOT:PSS. TPAFS-TMA to prevent electron injection from anode. Moreover, p-PHJ structure with pure donor/acceptor and electrode contacts, the charge injection barrier is increased under reverse bias. So compared with BHJ structure (PEDOT:PSS/PM6:Y6) OPD, p-PHJ structure (TPAFs-TMA/PM6-Br50:Y6) formed by two combination strategies, dark current density (4.03 × 10−10 A cm−2) is significantly reduced by 4 orders of magnitude. At the same time, it shows very high specific detectivities based on shot noise and total noise current.