Enhancing Optoelectronic Performance Including 3D p-n Junction Nanostructured Doping of WSe<sub>2</sub> Via Block Copolymer Patterns
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Two-dimensional transition metal dichalcogenides (TMDs) such as MoS₂, MoSe₂, ReS₂, and WSe₂, exhibit unique optical and electrical properties, making them ideal for optoelectronic applications. Traditional doping techniques like high-temperature diffusion and ion implantation are unsuitable for these atomic-scale materials. Nanopatterning with block copolymers (BCP), such as polystyrene-b-poly(methyl methacrylate) (PS-b-PMMA), enables precise nanoscale doping, forming three-dimensional p-n junctions. In WSe₂, nanostructures like lamellae or cylinders are formed, and selective etching induces p-type characteristics in the patterned areas. This increases the p-n junction area, enhancing photodetector performance by improving electron-hole pair collection. BCP nanopatterning provides a scalable, precise method for tuning the electronic properties of TMDs, advancing the development of next-generation optoelectronic devices.