Homojunction p-n diode using polarity switching in doped Conjugated Polymer thin film
발표자
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초록
내용
Organic semiconductors (OSCs) often struggle with n-type charge transport due to environmental instability. Developing stable, high-efficiency n-type OSCs is crucial for devices with p-n junctions in logic circuits. This study introduces polarity switching, which the charge carrier type in a highly p-doped p-type conjugated polymer (CP) switches from p to n-type. Validation of polarity switching includes Seebeck coefficient analysis, AC Hall measurements, field-effect transistor mobility, and photoelectron spectroscopy. Structural changes induced by doping are examined via grazing-incidence wide-angle X-ray scattering and X-ray photoelectron spectroscopy, revealing a direct correlation between increased delocalized polarons and a reduced bandgap. This leads to band-like transport and orientation changes in crystalline structures. This research culminates in a vertical homojunction organic diode with a rectification ratio in the tens of thousands, showing potential to flexible device.