Enhancing the Performance of Printed P-Type CuI Transistors to Theoretical Limits through Room Temperature Vacancy Engineering
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초록
내용
The development of a new high-performance inorganic p-type thin-film transistor could enable advanced transparent electronic devices, complementing the broadly commercialized n-type IGZO transistors. Copper monoiodide (CuI) stands out due to its visible light transparency, high intrinsic hole mobility, and suitability for low-temperature processes. However, existing CuI transistors perform below expectations due to uncontrolled excess charge and defect scattering from copper and iodine vacancies. This study presents a solution-processed CuI transistor with significantly improved mobility through a room-temperature vacancy-engineering strategy using sodium-embedded alumina as a high-k dielectric. Thorough analyses reveal how processing-dependent vacancy modulation enhances transport mechanisms in CuI, demonstrating high hole mobility in the optimized CuI thin-film transistors. The successful operation of IGZO-CuI complementary logic gates confirms the device's applicability.