Development of new hole-transporting layer structures and materials for perovskite quantum-dot electroluminescent devices
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초록
내용
In electroluminescent devices based on PeQDs, hole-transporting layers (HTLs) and emitting layers (EMLs) are critical to performance. However, compared to extensive research on perovskite-based emitting materials, studies on HTLs are limited. This presentation discusses our recent findings. First, we examined the impact of HTLs by fabricating devices with multi-layer HTL configurations. Increasing the number of HTLs improved external quantum efficiency (EQE) and reduced turn-on voltage (Von) due to a decrease in the hole-injection barrier. Second, we designed and synthesized new arylamine-based HTL polymers. Controlling the highest occupied molecular orbital (HOMO) energy levels of HTLs is key to enhancing device characteristics. We achieved this by modifying the substituents and backbone structures. We fabricated and characterized a series of electroluminescent devices with different HTLs. Detailed analysis of the materials and devices will be presented.