Design and Synthesis of Non-Fullerene Acceptors for Sensitive Photodetection beyond 1100 nm
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초록
내용
The near-infrared (NIR) and shortwave infrared (SWIR) spectrum, typically spanning wavelengths from 750 to 2500 nm, along with its photodetection technologies, has garnered increased attention in recent years. In this study, we present a BHJ OPD that exhibits exceptional performance in sensing SWIR light, demonstrating robust photoresponse extending to 1200 nm. The molecular structure of 6CN as a new NFA comprises of a strong electron-donating building block, fused-cyclopentadithiophene, which induces the strong intracharge transfer (ICT) effect with the terminal group, resulting in an extending photoresponse up to 1200 nm. The optimal BHJ morphology can be obtained using non-halogenated solvent o-xylene (o-XY), yielding high-performance. The o-XY processed OPDs provide a high responsivity of ~ 0.2 A W−1 at λ=1200 nm and specific detectivity over 3×1011 Jones, which is, to the best of our knowledge, among the best-performing SWIR OPDs based on SWIR NFA absorbers.