Optoelectronic Logic-in-memory Operation through Wavelength-dependent Multistate Programmability Based on Narrow Bandgap Polymer Floating Gate and Wide Bandgap Organic Transistor Channel
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Multistate logic-in-memory operations have attracted great interest owing to their potential in next-generation computing, combining memory and processing functions. In this context, we introduce a wavelength-dependent optoelectronic logic-in-memory based on a light-sensitive floating gate. Combining a narrow bandgap polymer (pNDI-SVS, 1.37 eV) and a wide bandgap organic transistor channel (DNTT, 2.6 eV) enabled the controllable charge storage in the floating gate in response to the given optical stimuli. The clearly distinguishable 4 different multi-bit outputs of 0 V, 1.87 V, 16.6 V, and 19.9 V were achieved based on the immediate and reliable light-induced memory behavior of the proposed device under dark, 660 nm, 530 nm, and 455 nm irradiation conditions. Furthermore, the flexible device fabricated on a business card substrate exhibited stable operation behavior regardless of the bending angle, demonstrating its possibilities as an excellent paper-based optoelectronic device.