Device Simulation for Organic Anti-ambipolar Transistor Modeling
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초록
내용
The Anti-Ambipolar Transistor (AAT) devices have attracted a lot of attention as functional building blocks. Although the potential for rectifiers, photodetectors, artificial synapses, and frequency doublers has been demonstrated, there are still many unknowns aspects of physical mechanisms. In this paper, we provide an understanding of the physical mechanisms behind AAT devices with heterojunction structures that include p-type and n-type junctions. First, we implemented AAT using DNTT as the p-type and PTCDI-C8 material as the n-type. Using the Silvaco Atlas Simulator, we analyzed the AAT structure and conducted a modular and structural analysis of the internal charge and potential distribution. The analysis confirmed that a higher drain voltage in the PN junction results in a stronger electric field. Our results are expected to further improve our understanding of the physical mechanisms for exploiting the AAT structure.