High-Performance Split-Gate Thin-Film Transistor based on Coplanar Asymmetric Nanogap Electrodes Created Via Adhesion Lithography
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Split-gate (SG) thin film transistors (TFTs) have garnered significant attention as a promising next-generation device layout. Nonetheless, inherent challenges persist, such as a reduction in current passing through the split-gate gap. This study presents high-performance SG TFTs employing coplanar asymmetric nanogap (CAN) electrodes fabricated through adhesion lithography. To ensure successful adhesion lithography, a fluoropolymer was utilized as an adhesive layer between the Au electrodes and the substrate. The two electrodes have a flat surface profile with nanogap less than 100 nm. Patterning yield of 96.7% achieved for 540 CAN electrodes. SG TFTs were subsequently fabricated using CAN electrodes by depositing gate dielectric and organic semiconductor on CAN electrodes. Transfer curves were utilized to compare the drain current of single-gate TFTs with those of proposed SG TFTs. The proposed SG TFT exhibited similar drain current to single-gate TFTs.